V-band MMIC LNA using superlattice-inserted InP heterojunction FETs

This paper presents a V-band MMIC low-noise amplifier (LNA) using InP-based heterojunction FETs (HJFETs). While the HJFET utilizes an AlAs/InAs superlattice as well as non-alloyed ohmic contacts for improved reliability, we show that with appropriate epitaxial layer design these device structures do not lead to increase in the source resistance. The three-stage coplanar waveguide circuit design demonstrated a state-of-the-art noise figure of 2.0 dB with 22.1 dB gain at 60 GHz.

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