论文信息 - A physically-based low-frequency noise model for NFD SOI MOSFET's

A physically-based low-frequency noise model for NFD SOI MOSFET's

The floating-body effect (FBE) in nonfully-depleted (NFD) SOI MOSFETs gives rise to excess low-frequency noise. For the first time, the origin of the excess noise is identified to be the shot noise associated with impact ionization current and body-source diode current. The shot noise, normally negligible as compared with flicker noise, is amplified in the device through FBE. The noise model predicts that the excess low-frequency noise shows a Lorentzian-like spectrum as verified by experimental data. The physical explanation is further supported by the coincidence of the corner frequency in the noise spectrum and the AC output impedance.

[1] C. Hu,et al. A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors , 1990 .

[2] Eddy Simoen,et al. The kink-related excess low-frequency noise in silicon-on-insulator MOST's , 1994 .

[3] Babcock,et al. Correlation Between Low-frequency Noise Overshoot In SOI MOSFETs And Frequency Dependence Of Floating Body Effect , 1997, 1997 Symposium on VLSI Technology.

[4] Ping-Keung Ko,et al. Noise overshoot at drain current kink in SOI MOSFET , 1990, 1990 IEEE SOS/SOI Technology Conference. Proceedings.