论文信息 - Interfacial Oxide Layer Scavenging in Ferroelectric Hf0.5Zr0.5O2-Based MOS Structures With Ge Channel for Reduced Write Voltages - 字舞流文

Interfacial Oxide Layer Scavenging in Ferroelectric Hf0.5Zr0.5O2-Based MOS Structures With Ge Channel for Reduced Write Voltages

A. Kummel | A. Khan | W. Chern | Chinsung Park | D. Das | H. Kashyap | S. Lombardo | Nashrah Afroze | Shimeng Yu | Jae Hur | Nujhat Tasneem