Polynomial noise modeling of silicon-based GaN HEMTs

In the framework of silicon Si technology, evolution towards high-frequency analog applications - which involves innovative solutions such as SiGe BiCMOS and FinFET devices - wide bandgap semiconductors grown on Si substrates are likely to represent a valid option in those cases wherever high-power handling and low noise figures are required. Although such active devices have been extensively investigated in the last years, much of interest has been devoted in developing nonlinear models for high-power applications, whereas reliable noise models still lack, in particular, the validity of traditional i.e. equivalent temperature-based approaches for noise modeling of wide bandgap devices has not been sufficiently probed yet.

[1]  T. E. Kazior,et al.  High Performance Mixed Signal and RF Circuits Enabled by the Direct Monolithic Heterogeneous Integration of GaN HEMTs and Si CMOS on a Silicon Substrate , 2010, 2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

[2]  James S. Dunn,et al.  SiGe BiCMOS Trends - Today and Tomorrow , 2006, IEEE Custom Integrated Circuits Conference 2006.

[3]  P. Colantonio,et al.  Development of GaN based MMIC for next generation X-Band space SAR T/R module , 2012, 2012 7th European Microwave Integrated Circuit Conference.

[4]  W. Ciccognani,et al.  An ultra-broadband robust LNA for defence applications in AlGaN/GaN technology , 2010, 2010 IEEE MTT-S International Microwave Symposium.

[5]  R. Q. Lane,et al.  The determination of device noise parameters , 1969 .

[6]  A. Mercha,et al.  Planar Bulk MOSFETs Versus FinFETs: An Analog/RF Perspective , 2006, IEEE Transactions on Electron Devices.

[7]  W. Heinrich,et al.  Noise modeling of GaN HEMT devices , 2012, 2012 7th European Microwave Integrated Circuit Conference.

[8]  W. M. Lim,et al.  GaN-on-Silicon integration technology , 2012, 2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT).

[9]  V. Kilchytska,et al.  Perspective of FinFETs for analog applications , 2004, Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850).

[10]  Guido Groeseneken,et al.  FinFET technology for analog and RF circuits , 2007, 2007 14th IEEE International Conference on Electronics, Circuits and Systems.

[11]  Dimitri Linten,et al.  The Potential of FinFETs for Analog and RF Circuit Applications , 2007, IEEE Transactions on Circuits and Systems I: Regular Papers.

[12]  Tomas Palacios,et al.  On-wafer integration of nitrides and Si devices: Bringing the power of polarization to Si , 2009, 2009 IEEE MTT-S International Microwave Symposium Digest.

[13]  J. Cressler.  SiGe HBT technology: a new contender for Si-based RF and microwave circuit applications , 1998 .

[14]  P. Janke,et al.  Robust low microwave noise GaN MODFETs with 0.60 dB noise figure at 10 GHz , 2000 .

[15]  D. Ducatteau,et al.  First Demonstration of High-Power GaN-on-Silicon Transistors at 40 GHz , 2012, IEEE Electron Device Letters.

[16]  M. Pospieszalski.  Modeling of noise parameters of MESFETs and MODFETs and their frequency and temperature dependence , 1989 .

[17]  M. Heuken,et al.  AlGaN-GaN HEMTs on patterned silicon (111) substrate , 2005, IEEE Electron Device Letters.

[18]  H. Veenstra,et al.  Opportunities at mm-Wave frequencies: SiGe or CMOS? , 2008, 2008 European Microwave Integrated Circuit Conference.

[19]  S. Lavanga,et al.  New fabrication process to manufacture RF-MEMS and HEMT on GaN/Si substrate , 2009, 2009 European Microwave Integrated Circuits Conference (EuMIC).

[20]  G. Tränkle,et al.  Analysis of the Survivability of GaN Low-Noise Amplifiers , 2007, IEEE Transactions on Microwave Theory and Techniques.

[21]  James S. Dunn,et al.  Status and Direction of Communication Technologies - SiGe BiCMOS and RFCMOS , 2005, Proceedings of the IEEE.

[22]  E. Limiti,et al.  Characterization and modeling of low-cost, high-performance GaN-Si technology , 2012, 2012 19th International Conference on Microwaves, Radar & Wireless Communications.

[23]  P. Wambacq,et al.  Device and circuit-level analog performance trade-offs: a comparative study of planar bulk FETs versus FinFETs , 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

[24]  D. Pavlidis,et al.  Improved quality GaN by growth on compliant silicon-on-insulator substrates using metalorganic chemical vapor deposition , 1998 .

[25]  M. Oppermann,et al.  T/R-module technologies today and possible evolutions , 2009, 2009 International Radar Conference "Surveillance for a Safer World" (RADAR 2009).

[27]  Walter Ciccognani,et al.  GaN-on-Silicon Evaluation for High-Power MMIC Applications , 2011 .

[28]  Guido Groeseneken,et al.  Identifying the Bottlenecks to the RF Performance of FinFETs , 2010, 2010 23rd International Conference on VLSI Design.

[29]  Hui Zhou,et al.  An improved large-signal I–V model of GaN HEMT , 2012, 2012 International Conference on Computational Problem-Solving (ICCP).

[30]  W. Ciccognani,et al.  Automated determination of device noise parameters using multi-frequency, source-pull data , 2012, 2012 7th European Microwave Integrated Circuit Conference.

[31]  GaN HEMT large-signal model research , 2012, The 2012 International Workshop on Microwave and Millimeter Wave Circuits and System Technology.

[32]  Walter Ciccognani,et al.  High-power monolithic AlGaN/GaN high electron mobility transistor switches , 2009, International Journal of Microwave and Wireless Technologies.

[33]  J. Lachapelle,et al.  A new GaN HEMT nonlinear model for evaluation and design of 1–2 watt power amplifiers , 2012, 2012 IEEE 55th International Midwest Symposium on Circuits and Systems (MWSCAS).

[34]  B. Lu,et al.  On-Wafer Seamless Integration of GaN and Si (100) Electronics , 2009, 2009 Annual IEEE Compound Semiconductor Integrated Circuit Symposium.

[35]  Ernesto Limiti,et al.  Highly reliable characterization approaches oriented to active device noise modeling , 2011 .

[36]  D. Harame,et al.  SiGe heterojunction bipolar transistors and circuits toward terahertz communication applications , 2004, IEEE Transactions on Microwave Theory and Techniques.

[37]  P. Russer.  Si and SiGe millimeter-wave integrated circuits , 1998 .

[38]  P. Romanini,et al.  X-Band GaN-HEMT LNA performance versus robustness trade-off , 2009, 2009 European Microwave Integrated Circuits Conference (EuMIC).

[39]  M. Soyuer.  The Impact of SiGe BiCMOS Technology on Microwave Circuits and Systems , 2000, 30th European Solid-State Device Research Conference.