论文信息 - Oriented Si and Ge Nanocrystals Formed in Al2O3 by Ion Implantation and Annealing - 字舞流文

Oriented Si and Ge Nanocrystals Formed in Al2O3 by Ion Implantation and Annealing

T. Vo‐Dinh | S. Pennycook | J. Budai | D. S. Zhou | C. White | R. Magruder | D. Hembree | S. Withrow