Enhanced gm3 cancellation for linearity improvement in CMOS LNAs

An enhanced linearity improvement technique based on the third order intermodulation distortion cancellation or gm3 cancellation technique is presented in this paper. By identifying the issues related to the conventional gm3 cancellation method, the proposed technique is used to design a 0.18mum CMOS LNA using Jazz semiconductor's BiCMOS process. With an IIP3 of more than +16dBm and gain of more than 15dB, the enhanced linearity LNA or EL2NA with a current consumption of 9mA from a 1.8V supply, provides an efficient way of improving linearity of 5G range direct conversion receivers

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