论文信息 - A racetrack mode-locked silicon evanescent laser.

A racetrack mode-locked silicon evanescent laser.

By utilizing a racetrack resonator topography, an on-chip mode locked silicon evanescent laser (ML-SEL) is realized that is independent of facet polishing. This enables integration with other devices on silicon and precise control of the ML-SEL's repetition rate through lithographic definition of the cavity length. Both passive and hybrid mode-locking have been achieved with transform limited, 7 ps pulses emitted at a repetition rate of 30 GHz. Jitter and locking range are measured under hybrid mode locking with a minimum absolute jitter and maximum locking range of 364 fs, and 50 MHz, respectively.

[1] J. Bowers,et al. Electrically pumped hybrid AlGaInAs-silicon evanescent laser. , 2006, Optics express.

[2] Yohan Barbarin,et al. Characterization of a 15 GHz integrated bulk InGaAsP passively modelocked ring laser at 1.53microm. , 2006, Optics express.

[3] Oded Cohen,et al. Mode-locked silicon evanescent lasers. , 2007, Optics express.

[4] Siyuan Yu,et al. Mode locking in large monolithic semiconductor ring lasers , 1998, Photonics West.

[5] Hybrid modelocking of semiconductor ring lasers incorporating passive deep-ridge waveguides , 2002 .

[6] D. Agarwal,et al. Optical interconnects to silicon chips using short pulses , 2002 .

[7] Hark Hoe Tan,et al. Electrical isolation of n -type and p -type InP layers by proton bombardment , 2001 .

[8] E. L. Portnoi,et al. Monolithic and multi-gigahertz mode-locked semiconductor lasers: constructions, experiments, models and applications , 2000 .