Elimination of bipolar-induced breakdown in fully-depleted SOI MOSFETs

N-channel SOI MOSFETs suffer from low breakdown voltages due to the existence of an inherent parasitic n-p-n bipolar transistor. In this work we introduce a new device structure, the dual source SOI MOSFET (DSFET) that eliminates the effects of the parasitic BJT. We also present measured and simulated results of the device demonstrating its effectiveness and illustrating its operation.<<ETX>>