In this article, an RF power amplifier which has a crucial importance for RF transceivers is designed and implemented. The main aim of the design is making the power amplifier linear at the center frequency 1.8 GHz. Linearity was measured with two tone test and according to the result of the test, the Carrier-to-Intermodulation (C/I) ratio should have been above 30 dB and two fundamental carriers with the 5 MHz space should be at least 1.25 Watt. Also, efficiency was tried to be kept as high as possible. Considering the three issues; linearity, output power and efficiency; the circuit was biased to the conditions of deep class AB. GaN transistor which has been very popular in recent years was used as an active device. The simulations and the layout of the circuit were all done with AWR Microwave Office. Taconic TSM30 600 was used as a substratum in the circuit. After the circuit was implemented, the measurements results were compared to simulations. Keywords-component; formatting; RF Power Amplifier, Linearity, GaN HEMT.
[1]
Ivan Boshnakov.
Practical Design Comparison Between High-Power GaAs MESFET and GaN HEMT
,
2007
.
[2]
Inder Bahl,et al.
Fundamentals of RF and Microwave Transistor Amplifiers
,
2009
.
[3]
S. C. Cripps,et al.
RF Power Amplifiers for Wireless Communications
,
1999
.
[4]
K. Mimis,et al.
A 2GHz GaN Class-J power amplifier for base station applications
,
2011,
2011 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications.
[5]
Franco Giannini,et al.
High Efficiency RF and Microwave Solid State Power Amplifiers
,
2009
.