Self-aligned, Extremely High Frequency Iii−v Metal-oxide- Semiconductor Field-effect Transistors on Rigid and Flexible Substrates
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Sanjay Krishna | Junghyo Nah | Jun-Chau Chien | Ali Javey | Kuniharu Takei | Ali M Niknejad | A. Niknejad | A. Javey | S. Krishna | K. Takei | Chuan Wang | E. Plis | J. Nah | Hui Fang | Jun-Chau Chien | Hui Fang | Chuan Wang | E Plis
[1] Chongwu Zhou,et al. Self-aligned fabrication of graphene RF transistors with T-shaped gate. , 2012, ACS nano.
[2] Jing Guo,et al. Nanoscale InGaSb heterostructure membranes on Si substrates for high hole mobility transistors. , 2012, Nano letters.
[3] A. Javey,et al. Ultrathin-Body High-Mobility InAsSb-on-Insulator Field-Effect Transistors , 2012, IEEE Electron Device Letters.
[4] G. Dambrine,et al. Flexible gigahertz transistors derived from solution-based single-layer graphene. , 2012, Nano letters.
[5] N. Wichmann,et al. Microwave performance of 100 nm-gate In0.53Ga0.47As/In0.52Al0.48As high electron mobility transistors on plastic flexible substrate , 2011 .
[6] J. Alamo. Nanometre-scale electronics with III–V compound semiconductors , 2011, Nature.
[7] Elena Plis,et al. Benchmarking the performance of ultrathin body InAs-on-insulator transistors as a function of body thickness , 2011 .
[8] J. Rogers,et al. Synthesis, assembly and applications of semiconductor nanomembranes , 2011, Nature.
[9] C. Dimitrakopoulos,et al. Wafer-Scale Graphene Integrated Circuit , 2011, Science.
[10] Kang L. Wang,et al. Radio frequency and linearity performance of transistors using high-purity semiconducting carbon nanotubes. , 2011, ACS nano.
[11] F. Xia,et al. High-frequency, scaled graphene transistors on diamond-like carbon , 2011, Nature.
[12] Hyunhyub Ko,et al. Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors , 2010, Nature.
[13] Andrew G. Gillies,et al. Nanowire active-matrix circuitry for low-voltage macroscale artificial skin. , 2010, Nature materials.
[14] Kang L. Wang,et al. High-speed graphene transistors with a self-aligned nanowire gate , 2010, Nature.
[15] Zhiyong Fan,et al. Parallel Array Inas Nanowire Transistors for Mechanically Bendable, Ultrahigh Frequency Electronics , 2022 .
[16] J. Carlin,et al. Ultrahigh-Speed AlInN/GaN High Electron Mobility Transistors Grown on (111) High-Resistivity Silicon with FT = 143 GHz , 2010 .
[17] Dae-Hyun Kim,et al. 30-nm InAs PHEMTs With $f_{T} = \hbox{644}\ \hbox{GHz}$ and $f_{\max} = \hbox{681}\ \hbox{GHz}$ , 2010, IEEE Electron Device Letters.
[18] J. Rogers,et al. GaAs photovoltaics and optoelectronics using releasable multilayer epitaxial assemblies , 2010, Nature.
[19] C. Dimitrakopoulos,et al. 100-GHz Transistors from Wafer-Scale Epitaxial Graphene , 2010, Science.
[20] E. Lind,et al. Vertical InAs nanowire wrap gate transistors with f(t) > 7 GHz and f(max) > 20 GHz. , 2010, Nano letters.
[21] C. Rutherglen,et al. Nanotube electronics for radiofrequency applications. , 2009, Nature nanotechnology.
[22] Henri Happy,et al. 80 GHz field-effect transistors produced using high purity semiconducting single-walled carbon nanotubes , 2009 .
[23] C. Lieber,et al. 12 GHz $F_{\rm MAX}$ GaN/AlN/AlGaN Nanowire MISFET , 2009 .
[24] A. Javey,et al. Formation and characterization of NixInAs/InAs nanowire heterostructures by solid source reaction. , 2008, Nano letters.
[25] Daehyun Kim,et al. 30-nm InAs Pseudomorphic HEMTs on an InP Substrate With a Current-Gain Cutoff Frequency of 628 GHz , 2008, IEEE Electron Device Letters.
[26] John A Rogers,et al. Radio frequency analog electronics based on carbon nanotube transistors , 2008, Proceedings of the National Academy of Sciences.
[27] Henri Happy,et al. Gigahertz frequency flexible carbon nanotube transistors , 2007 .
[28] Henri Happy,et al. Intrinsic current gain cutoff frequency of 30GHz with carbon nanotube transistors , 2007 .
[29] Zhenqiang Ma,et al. Microwave thin-film transistors using Si nanomembranes on flexible polymer substrate , 2006 .
[30] E. Menard,et al. High-speed mechanically flexible single-crystal silicon thin-film transistors on plastic substrates , 2006, IEEE Electron Device Letters.
[31] John A. Rogers,et al. Gigahertz operation in flexible transistors on plastic substrates , 2006 .
[32] Zhen Yu,et al. Carbon nanotube transistor operation at 2.6 Ghz , 2004 .
[33] Karl Hess,et al. High field transport in GaAs, InP and InAs , 1984 .
[34] H. Grubin. The physics of semiconductor devices , 1979, IEEE Journal of Quantum Electronics.
[35] S. M. Sze,et al. Physics of semiconductor devices , 1969 .