论文信息 - Measurement of the silicon resistivity at very high temperature with junction isolated van der Pauw structures

Measurement of the silicon resistivity at very high temperature with junction isolated van der Pauw structures

The limits of the traditional experiment approach to extract resistivity in junction-isolated samples are discussed basing both on physical simulations and on extensive experimental data. Several optimization criteria to design van der Pauw resistors and a related characterization procedure are proposed and experimentally validated in order to extend the extraction of the resistivity up to 500/spl deg/C.

W. Fichtner | M. Ciappa | C. Corvasce | D. Barlini | F. Illien

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