Degradation induced by TID radiation and hot-carrier stress in 130-nm short channel PDSOI NMOSFETs

Abstract Hot-carrier reliability for devices operating in radiation environment must be considered. In this paper, we investigate how total ionizing dose impacts the hot-carrier reliability of partially-depleted SOI I/O NMOSFETs, highlighting the effect of buried oxide. Firstly, radiation-induced damage on short channel SOI devices with 100 nm thick Si film was investigated. After low total dose irradiation, incomplete fully-depleted state has been formed due to the non-uniformly distributed positive charges in the buried oxide. Furthermore, as the dominated factor of hot-carrier injection, the body current reduces after irradiation. Subsequently, the irradiated SOI devices were subjected to hot-carrier stress for 9000-s long time. Compared with unirradiated devices, the irradiated samples display enhanced hot-carrier degradation. We attribute this phenomenon to that radiation lowers the barrier for hot-carrier injection. Therefore, in order to ensure the reliability of SOI devices operating in harsh radiation environments, SOI devices with higher quality or corresponding hardness design should be taken.

[1]  Jean-Pierre Colinge.  SOI CMOS Technology , 2004 .

[2]  N. Arora,et al.  MOSFET substrate current model for circuit simulation , 1991 .

[3]  J. T. Clemens,et al.  Characterization of the electron mobility in the inverted <100> Si surface , 1979, 1979 International Electron Devices Meeting.

[4]  J. B. McKitterick,et al.  Electron and hole trapping in irradiated SIMOX, ZMR and BESOI buried oxides , 1992 .

[5]  S. Gerardin,et al.  Degradation Induced by X-Ray Irradiation and Channel Hot Carrier Stresses in 130-nm NMOSFETs With Enclosed Layout , 2008, IEEE Transactions on Nuclear Science.

[6]  Zhengxuan Zhang,et al.  Bias dependence of TID radiation responses of 0.13 μm partially depleted SOI NMOSFETs , 2013, Microelectron. Reliab..

[7]  Willy Sansen,et al.  Layout techniques to enhance the radiation tolerance of standard CMOS technologies demonstrated on a pixel detector readout chip , 2000 .

[8]  Jiangang Zhu,et al.  A thorough investigation of hot-carrier-induced gate oxide breakdown in partially depleted N- and P-channel SIMOX MOSFETs , 2002, Microelectron. Reliab..

[9]  H. Hughes,et al.  Radiation effects and hardening of MOS technology: devices and circuits , 2003 .

[10]  J. L. Pelloie,et al.  Worst-case bias during total dose irradiation of SOI transistors , 2000 .

[11]  Sorin Cristoloveanu,et al.  Frontiers of silicon-on-insulator , 2003 .

[12]  S. Haendler,et al.  Low frequency noise and hot-carrier reliability in advanced SOI MOSFETs , 2004 .

[13]  Yunfei En,et al.  Total-Ionizing-Dose Induced Coupling Effect in the 130-nm PDSOI I/O nMOSFETs , 2014, IEEE Electron Device Letters.

[14]  Sorin Cristoloveanu,et al.  Hot-carrier degradation mechanisms in silicon-On-Insulator MOSFETS , 1997 .

[15]  Chenming Hu,et al.  Simulation of SOI devices and circuits using BSIM3SOI , 1998, IEEE Electron Device Letters.

[16]  Zhiyuan Hu,et al.  Investigating the degradation mechanisms caused by the TID effects in 130 nm PDSOI I/O NMOS , 2014 .

[17]  John D. Cressler,et al.  Total dose effects on the shallow-trench isolation leakage current characteristics in a 0.35 /spl mu/m SiGe BiCMOS technology , 1999 .

[18]  Cor Claeys,et al.  Electrical stress on irradiated thin gate oxide partially depleted SOI nMOSFETs , 2007 .

[19]  James Stasiak,et al.  Trap creation in silicon dioxide produced by hot electrons , 1989 .

[20]  A. Mercha,et al.  Impact of 7.5-MeV proton irradiation on front-back gate coupling effect in ultra thin gate oxide FD-SOI n-MOSFETs , 2004, IEEE Transactions on Nuclear Science.

[21]  S. Gerardin,et al.  Channel Hot Carrier Stress on Irradiated 130-nm NMOSFETs , 2008, IEEE Transactions on Nuclear Science.

[22]  P. Dodd,et al.  Radiation effects in SOI technologies , 2003 .

[23]  Juin J. Liou,et al.  A review of recent MOSFET threshold voltage extraction methods , 2002, Microelectron. Reliab..