A 1-V 3.8 - 5.7-GHz wide-band VCO with differentially tuned accumulation MOS varactors for common-mode noise rejection in CMOS SOI technology

In this paper, a 1-V 3.8 - 5.7-GHz wide-band voltage-controlled oscillator (VCO) in a 0.13-/spl mu/m silicon-on-insulator (SOI) CMOS process is presented. This VCO features differentially tuned accumulation MOS varactors that: 1) provide 40% frequency tuning when biased between 0 - 1 V and 2) diminish the adverse effect of high varactor sensitivity through rejection of common-mode noise. This paper shows that, for differential LC VCOs, all low-frequency noise such as flicker noise can be considered to be common-mode noise, and differentially tuned varactors can be used to suppress common-mode noise from being upconverted to the carrier frequency. The noise rejection mechanism is explained, and the technological advantages of SOI over bulk CMOS in this regard is discussed. At 1-MHz offset, the measured phase noise is -121.67 dBc/Hz at 3.8 GHz, and -111.67 dBc/Hz at 5.7 GHz. The power dissipation is between 2.3 - 2.7-mW, depending on the center frequency, and the buffered output power is -9 dBm. Due to the noise rejection, the VCO is able to operate at very low voltage and low power. At a supply voltage of 0.75 V, the VCO only dissipates 0.8 mW at 5.5 GHz.

[1]  D. Leeson.  A simple model of feedback oscillator noise spectrum , 1966 .

[2]  G. Temes,et al.  Analog MOS Integrated Circuits for Signal Processing , 1986 .

[3]  D. Buss.  Device issues in the integration of analog/RF functions in deep submicron digital CMOS , 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).

[4]  A. Hajimiri,et al.  Design issues in CMOS differential LC oscillators , 1999, IEEE J. Solid State Circuits.

[5]  H. Ainspan,et al.  A comparison of MOS varactors in fully-integrated CMOS LC VCO's at 5 and 7 GHz , 2000, Proceedings of the 26th European Solid-State Circuits Conference.

[6]  Ulrich L. Rohde,et al.  RF/Microwave Circuit Design for Wireless Applications , 2000 .

[7]  P. Andreani,et al.  On the use of MOS varactors in RF VCOs , 2000, IEEE Journal of Solid-State Circuits.

[8]  K. O. Kenneth,et al.  A packaged 1.1-GHz CMOS VCO with phase noise of -126 dBc/Hz at a 600-kHz offset , 2000, IEEE Journal of Solid-State Circuits.

[9]  C. Plett,et al.  The effect of varactor nonlinearity on the phase noise of completely integrated VCOs , 2000, IEEE Journal of Solid-State Circuits.

[10]  Rinaldo Castello,et al.  A 1 mA, -120.5 dbc/Hz at 600 kHz from 1.9 GHz fully tuneable LC CMOS VCO , 2000, Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044).

[11]  N. Zamdmer,et al.  A 0.13-/spl mu/m SOI CMOS technology for low-power digital and RF applications , 2001, 2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184).

[12]  M. Tiebout,et al.  Low-power low-phase-noise differentially tuned quadrature VCO design in standard CMOS , 2001, IEEE J. Solid State Circuits.

[13]  Mourad N. El-Gamal,et al.  A Sub-1-V 4-GHz CMOS VCO and a 12.5-GHz oscillator for low-voltage and high-frequency applications , 2001 .

[14]  J.-O. Plouchart,et al.  Accumulation MOS varactors for 4 to 40 GHz VCOs in SOI CMOS , 2002, 2002 IEEE International SOI Conference.

[15]  Duixian Liu,et al.  A 1 V 3.8-5.7 GHz differentially-tuned VCO in SOI CMOS , 2002, 2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280).

[16]  J. Plouchart,et al.  A low-voltage multi-GHz VCO with 58% tuning range in SOI CMOS , 2002, Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285).