论文信息 - Noise temperature in GaAs epi-layer for FET's

Noise temperature in GaAs epi-layer for FET's

The noise temperature field-dependent relationship was experimentally investigated in thin GaAs epi-layer. It was found that the commonly used relationship is inaccurate for most of the devices. A new relationship of extended, validity was derived in the lattice temperature 90-370 K.

J. Graffeuil | P. Rossel | G. Blasquez | J. Sautereau

[1] B. Loriou,et al. Design and Performance of Low Noise C -and X - Band GaAs FET Mixers , 1977, 1977 7th European Microwave Conference.

[2] H. Beneking,et al. Dependence of the Noise Parameters of the GaAs Mesfet on Technology, Parasitic Components and Bias Conditions in the Frequency Range Up to 12 GHz , 1977, 1977 7th European Microwave Conference.

[3] T. Maloney,et al. Transient and steady‐state electron transport properties of GaAs and InP , 1977 .

[4] J. Frey. Effects of intervalley scattering on noise in GaAs and InP field-effect transistors , 1976, IEEE Transactions on Electron Devices.

[5] G. I. Haddad,et al. COMPARISON OF THE HOT ELECTRON-DIFFUSION RATES FOR GaAs AND InP. , 1973 .

[6] G. Glover. Study of electron energy relaxation times in GaAs and InP , 1973 .

[7] W. Baechtold,et al. Noise behavior of GaAs field-effect transistors with short gate lengths , 1972 .

[8] A. van der Ziel,et al. Thermal noise in the hot electron regime in FET's , 1971 .

[9] G. S. Kino,et al. Transport Properties of GaAs , 1968 .

[10] W Fawcett,et al. Effect of field-dependent diffusion on stable domain propagation in the Gunn effect , 1967 .

[11] J. Graffeuil,et al. Noise in ungated GaAs F.E.T. , 1976, 1976 International Electron Devices Meeting.