论文信息 - Bias-assisted photoelectrochemical etching of p-GaN at 300 K - 字舞流文

Bias-assisted photoelectrochemical etching of p-GaN at 300 K

H. Morkoç | C. Cai | M. Nathan | P. Chow | J. V. Hove | A. Wowchak | J. E. Borton