Growth optimization for low residual carriers in undoped midinfrared InAs/GaSb superlattices

Reducing residual background carriers in InAs/GaSb superlattices (SLs) is an essential task to increase the operating temperature of photoconductive devices. This paper discusses how low-temperature Hall measurements were used to tune several SL growth parameters for the minimum residual carriers in a typical midinfrared 21 A InAs/24 A GaSb SLs designed for the 4 μm cutoff wavelength. Among the three growth parameters studied, neither growth temperature nor in situ postannealing significantly affected the intrinsic carrier type and doping concentration. The lowest carrier density of 1.8×1011 cm−2 was achieved at 400 °C. All SLs grown at 400 °C maintained the lowest density around 1.6×1011 cm−2 with or without postannealing. However, in-plane carrier mobility showed a slight improvement with annealing, especially at temperatures above 450 °C. The growth parameter most sensitive to the carrier density was interface control. With a minor variation in interface shutter sequence, the carrier density dramatical...

[1]  Latika Becker,et al.  Influence of IR sensor technology on the military and civil defense , 2006, SPIE OPTO.

[2]  S. R. Smith,et al.  Hopping conduction in heavily doped bulk n-type SiC , 1997 .

[3]  Martin Walther,et al.  Growth of InAs/GaSb short-period superlattices for high-resolution mid-wavelength infrared focal plane array detectors , 2005 .

[4]  Gail J. Brown,et al.  Demonstration of interface-scattering-limited electron mobilities in InAs∕GaSb superlattices , 2007 .

[5]  William C. Mitchel,et al.  Interface roughness estimate from carrier transport in InAs/GaSb superlattices , 2008, SPIE OPTO.

[6]  William C. Mitchel,et al.  Study of residual background carriers in midinfrared InAs∕GaSb superlattices for uncooled detector operation , 2008 .

[7]  Yajun Wei,et al.  Capacitance-voltage investigation of high-purity InAs∕GaSb superlattice photodiodes , 2006 .

[8]  B. R. Bennett,et al.  Interpreting interfacial structure in cross-sectional STM images of III–V semiconductor heterostructures , 2000 .

[9]  Krishnamurthy Mahalingam,et al.  Growth of short-period InAs∕GaSb superlattices , 2006 .

[10]  Jerry R. Meyer,et al.  Interface roughness scattering in semiconducting and semimetallic InAs‐Ga1−xInxSb superlattices , 1993 .

[11]  David H. Tomich,et al.  Exploring optimum growth for high quality InAs/GaSb type-II superlattices , 2004 .

[12]  Leo Esaki,et al.  Observation of semiconductor‐semimetal transition in InAs‐GaSb superlattices , 1979 .

[13]  Interface-roughness parameters in InAs quantum wells determined from mobility , 2008 .

[14]  Michael A. Kinch,et al.  Fundamental physics of infrared detector materials , 2000, SPIE OPTO.

[15]  Frank Fuchs,et al.  Control of the residual doping of InAs/(GaIn)Sb infrared superlattices , 2000 .

[16]  Michael A. Kinch.  High-operating-temperature (HOT) detector requirements , 2001, SPIE Optics + Photonics.

[17]  Infrared imaging with InAs/GaSb type‐II superlattices , 2006 .

[18]  M. Razeghi,et al.  Type II superlattice photodetectors for MWIR to VLWIR focal plane arrays , 2006, SPIE Defense + Commercial Sensing.

[19]  N. Mason,et al.  Interface and layer thickness dependence of the effective mass in InAsGaSb superlattices studied by high field cyclotron resonance , 1996 .

[20]  M. Razeghi,et al.  High performance Type II InAs/GaSb superlattices for mid, long, and very long wavelength infrared focal plane arrays , 2005, SPIE Defense + Commercial Sensing.

[21]  Tim Ashley,et al.  Higher-operating-temperature high-performance infrared focal plane arrays , 2004, SPIE OPTO.

[22]  Gold.  Electronic transport properties of a two-dimensional electron gas in a silicon quantum-well structure at low temperature. , 1987, Physical review. B, Condensed matter.

[23]  Manijeh Razeghi,et al.  Influence of residual impurity background on the nonradiative recombination processes in high purity InAs∕GaSb superlattice photodiodes , 2006 .

[24]  Antoni Rogalski,et al.  Material considerations for third generation infrared photon detectors , 2007 .