Smart stacked InGaP/GaAs/GaAs//Si quadruple-junction solar cells

We report InGaP/GaAs/GaAs//Si quadruplejunction solar cells with a two-terminal configuration fabricated by smart stack technology using Pd nanoparticle arrays. We demonstrate the use of GaAs/GaAs dual-junction solar cells as the second and third cells in a triple-junction top cells for the current matching to Si bottom cells. A high open circuit voltage of 2.94 eV was obtained in an InGaP/GaAs/GaAs triple-junction top cell that was stacked to a Si bottom cell. The short-circuit current density of a smart stacked InGaP/GaAs/ GaAs//Si solar cell was in good agreement with that estimated from external quantum efficiency measurements. An efficiency of 18.5% with a high open circuit voltage of 3.3 V was obtained in InGaP/GaAs/GaAs//Si quadruple-junction solar cells.

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