A microstructure semiconductor thermocouple for microwave power sensors

By using standard silicon planar process, combined with an anisotropically etch technology, a microstructure Si-Ta/sub 2/N thermocouple for microwave power sensors has been fabricated. The sensor has a sensitivity as high as 200 /spl mu/V/mW over a frequency range of 10 MHz to 18 GHz at a power level from 1 /spl mu/W to 100 mW.