Long-wave (10 μm) infrared light emitting diode device performance

Abstract Electroluminescence in the range of 6–12 μm is observed from an Sb-based type-II interband quantum cascade structure. The LED structure has 30 active/injection periods. We have studied both top-emitting and flip-chip mount bottom emitting LED devices. For room temperature operation, an increase, saturation and decrease in light output occur at successively higher injection currents. An increase of about 10 times in light output occurs when device is operated at 77 K compared to room temperature operation. This increase is attributed to reduced Auger non-radiative recombination at lower temperatures. The peak-emission wavelengths at room temperature and 80 K operation are 7 and 10 μm, respectively. These devices can be used for high-temperature simulation in an infrared scene generation experiment.

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