Characterization of epitaxially grown films of vanadium oxides

The growth of VO2 and V2O3 thin films by reactive sputtering has been investigated. Previously reported studies of such thin films have often presented ambiguous results concerning the precise nature of the layers produced. A thorough and comprehensive characterization program including x‐ray diffraction, scanning electron microscopy, Rutherford‐backscattering spectroscopy, and electrical conductivity measurements has been undertaken to ensure that the films produced were of a true epitaxial nature.