Role of Ru nano-dots embedded in TiO2 thin films for improving the resistive switching behavior

Ru nano-dots were embedded in a Pt/TiO2/Pt resistive switching cell to improve the uniformity of the switching parameters. The TiO2 film grown on the Ru nano-dots had a rutile structure locally whereas other parts of the TiO2 film had an anatase structure. The rutile-structured TiO2 formed conducting filaments easily and their rupture was much more uniform than the randomized ones in anatase TiO2. This largely improved the resistance uniformity at the reading voltage during the repeated resistance switching events. The improvement was also attributed to the high leakage current of the pristine sample at the reading voltage.

[1]  Frederick T. Chen,et al.  Improvement of resistive switching characteristics in TiO2 thin films with embedded Pt nanocrystals , 2009 .

[2]  Byung Joon Choi,et al.  Anode-interface localized filamentary mechanism in resistive switching of TiO2 thin films , 2007 .

[3]  Jae Hyuck Jang,et al.  Atomic structure of conducting nanofilaments in TiO2 resistive switching memory. , 2010, Nature nanotechnology.

[4]  Byung Joon Choi,et al.  Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition , 2005 .

[5]  R. Dittmann,et al.  Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges , 2009, Advanced materials.

[6]  C. Hwang,et al.  Investigation on the Growth Initiation of Ru Thin Films by Atomic Layer Deposition , 2010 .

[7]  John Paul Strachan,et al.  Diffusion of Adhesion Layer Metals Controls Nanoscale Memristive Switching , 2010, Advanced materials.

[8]  B. Hyde,et al.  Crystallographic shear in the higher titanium oxides: Structure, texture, mechanisms and thermodynamics , 1972 .

[9]  Jun Yeong Seok,et al.  Electrically configurable electroforming and bipolar resistive switching in Pt/TiO2/Pt structures , 2010, Nanotechnology.

[10]  C. Hwang,et al.  High dielectric constant TiO2 thin films on a Ru electrode grown at 250 °C by atomic-layer deposition , 2004 .

[11]  R. Waser,et al.  Coexistence of Bipolar and Unipolar Resistive Switching Behaviors in a Pt ∕ TiO2 ∕ Pt Stack , 2007 .

[12]  Qi Liu,et al.  Controllable growth of nanoscale conductive filaments in solid-electrolyte-based ReRAM by using a metal nanocrystal covered bottom electrode. , 2010, ACS nano.

[13]  Cheol Seong Hwang,et al.  Study on the electrical conduction mechanism of bipolar resistive switching TiO2 thin films using impedance spectroscopy , 2010 .