Novel technique for preparing porous silicon

We have performed photoluminescence studies on porous, p‐type as well as n‐type silicon wafers which have been prepared in air or in a dry nitrogen atmosphere, utilizing a spark‐erosion technique. This sample preparation, which does not involve aqueous solutions or fluorine contaminants, yields similar photoluminescence spectra as those obtained by anodic etching in HF or unbiased etching in various HF‐containing reagents. The wavelength of the photoluminescence peaks are somewhat shifted into the blue region compared to porous silicon obtained by anodic etching. We have also taken photoluminescence spectra on amorphous silicon, SiO2, and oxidized, annealed porous silicon. Our results are interpreted in the light of the presently suggested theories.

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