Effects of Recoil-Implanted Oxygen on Depth Profiles of Defects and Annealing Processes in P+-Implanted Si Studied Using Monoenergetic Positron Beams
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A. Uedono | Masahito Watanabe | T. Ohdaira | R. Suzuki | T. Kitano | T. Moriya | S. Tanigawa | T. Mikado | T. Kawano