22nm FDSOI technology for emerging mobile, Internet-of-Things, and RF applications

22FDX™ is the industry's first FDSOI technology architected to meet the requirements of emerging mobile, Internet-of-Things (IoT), and RF applications. This platform achieves the power and performance efficiency of a 16/14nm FinFET technology in a cost effective, planar device architecture that can be implemented with ∼30% fewer masks. Performance comes from a second generation FDSOI transistor, which produces nFET (pFET) drive currents of 910μΑ/μm (856μΑ/μm) at 0.8 V and 100nA/μm Ioff. For ultra-low power applications, it offers low-voltage operation down to 0.4V V<inf>min</inf> for 8T logic libraries, as well as 0.62V and 0.52V V<inf>min</inf> for high-density and high-current bitcells, ultra-low leakage devices approaching 1pA/μm I<inf>off</inf>, and body-biasing to actively trade-off power and performance. Superior RF/Analog characteristics to FinFET are achieved including high f<inf>T</inf>/f<inf>MAx</inf> of 375GHz/290GHz and 260GHz/250GHz for nFET and pFET, respectively. The high f<inf>MAx</inf> extends the capabilities to 5G and milli-meter wave (>24GHz) RF applications.

[1]  O. Weber,et al.  14nm FDSOI upgraded device performance for ultra-low voltage operation , 2015, 2015 Symposium on VLSI Technology (VLSI Technology).

[2]  J. Mazurier,et al.  14nm FDSOI technology for high speed and energy efficient applications , 2014, 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.

[3]  S. Narasimha,et al.  A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications , 2011, 2011 International Electron Devices Meeting.

[4]  M. Vinet,et al.  High performance extremely thin SOI (ETSOI) hybrid CMOS with Si channel NFET and strained SiGe channel PFET , 2012, 2012 International Electron Devices Meeting.

[5]  M. Belleville,et al.  On the Variability in Planar FDSOI Technology: From MOSFETs to SRAM Cells , 2011, IEEE Transactions on Electron Devices.