A CMOS readout circuit for a low shunt resistance IR photo-detector

Specific Infrared (IR) detection systems are a solution for non-invasive monitoring of polymer aging in electrical power plants. For such application, the target photo-detector has a low shunt impedance of 40Ω and produces a large photocurrent of 70 µA. This paper proposes a readout circuit designed in XFAB 0.18µm technology. Based on a CMDI architecture, a bi-cascode current mirroring direct injection circuit is proposed. It offers a 98 % charge injection efficiency. The structure performs the DC current cancellation and integrate the resulting current in a 20pF capacitance. The 20µs duration pulses are integrated with a linearity error of 0.01 %.

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