Composition control of long wavelength MBE HgCdTe using In-situ spectroscopic ellipsometry

Improved composition control of Hg1-xCdxTe layers grown by molecular beam epitaxy using in-situ spectroscopic ellipsometry is described. This has increased our composition yields from <40% to approximately 70% for a specification of x to within 0.0015 of target composition. Knowledge of composition during growth also enables corrections to effusion cell temperatures so that the in-depth composition profile can be controlled. Further improvements were obtained after active composition control was implemented whereby the ellipsometer controls the Te cell temperature to maintain the desired composition.