Three-Dimensional Monte Carlo Simulations--Part II: Recoil Phenomena

A Monte Carlo method has been applied to recoil calculation. The spatial distribution of disorder has been analyzed in connection with parameters like ion mass, energy, and dose. Also implants in multilayer targets and the characteristic features of oxygen recoiling from a SiO /sub 2/ coating into Si underneath have been analyzed.

[1]  D. Thompson,et al.  Disorder production and amorphisation in ion implanted silicon , 1980 .

[2]  G. Carter,et al.  Energy spike generation and quenching processesin ion bombardment induced amorphizationof solids , 1978 .

[3]  R. Rosa,et al.  Monte Carlo calculations on spatial distribution of implanted ions in silicon , 1976 .

[4]  A. Zani,et al.  Residual lattice disorder in self‐implanted silicon after pulsed laser irradiation , 1982 .

[5]  F. Zignani,et al.  Dose dependence of penetration and damage profiles of P+-channeled ions in silicon simulated by computer , 1975 .

[6]  D. Thompson,et al.  Computer simulation of ion bombardment collision cascades , 1978 .

[7]  A. M. Mazzone,et al.  Three-Dimensional Monte Carlo Simulations--Part I: Implanted Profiles for Dopants in Submicron Device , 1984, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems.

[8]  R. Shimizu,et al.  Computer simulation of atomic mixing during ion bombardment , 1975 .

[9]  F. Zignani,et al.  Radiation damage in silicon produced by phosphorus implantation: Random and aligned implants , 1978 .

[10]  I. Adesida,et al.  Monte Carlo simulation of ion beam penetration in solids , 1982 .

[11]  F. Ferrieu.  Ion-beam induced atomic mixing at the Si02/Si interface studied by means of monte carlo simulation , 1982 .

[12]  Y. Yamamura,et al.  Computer simulation of cascade developments in amorphous targets , 1978 .

[13]  M. Roush,et al.  Evolve, a time-dependent monte carlo code to simulate the effects of ion-beam-induced atomic mixing , 1981 .