论文信息 - InP HEMTs: physics, applications, and future

InP HEMTs: physics, applications, and future

In this paper, we review our recent results obtained for InP-based HEMTs. We have developed several fabrication techniques, and obtained an ultrahigh f/sub T/ of 562 GHz for a 25 nm long gate pseudomorphic InAlAs/InGaAs HEMT. We also discuss possible applications of our HEMTs and the future of InP-based HEMTs.

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