论文信息 - Acceptor compensation mechanism by midgap defects in nitrogen‐doped ZnSe films

Acceptor compensation mechanism by midgap defects in nitrogen‐doped ZnSe films

A new carrier compensation mechanism has been investigated in nitrogen‐doped ZnSe films grown by low‐pressure metalorganic vapor phase epitaxy. Photoconduction spectrum measurements have revealed the existence of deep defect levels located just above the center of the band gap in N‐doped, highly compensated films. These results combined with photo‐Hall measurements (under infrared illumination) have revealed that these midgap defect levels act as deep donors, and play an important role in carrier compensation in shallow acceptor doped ZnSe films.

A. Katsui | K. Ando | Y. Kawaguchi | A. Ohki

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