Pulsed stress reliability investigations of schottky diodes and HBTS

Experimental results from stressing Schottky diodes and HBTs employing TLP (Transmission Line Pulses) with 100ns duration time and ESD pulses following the Human Body Model are compared. Based on optical and electrical characterisation the same failure mechanisms seem to occur indicating the strong degree of relationship between these two methods. Device failures are explained by thermally activated interface and bulk reactions, field enhanced material transport and hot charge carrier effects.