Multi-level cell memory device using tcm

A multi-level cell memory device using TCM(Trellis Coded Modulation) is provided to reduce bit error rate in write operation of a multi-level cell memory and to increase the number of bits stored in one memory sell, by using a module coupling encoding and signal mapping in writing data to the multi-level cell memory. A multi-level cell memory device stores data, and includes an MLC memory cell(240), an outer encoder(210) and a TCM modulator(220). The outer encoder generates outer encoded bit stream by encoding the data through a first encoding method. The TCM modulator writes the data into the MLC memory cell by applying a program pulse to the MLC memory cell. The program pulse is generated by modulating the outer encoded bit stream.