论文信息 - The future of bipolar power transistors

The future of bipolar power transistors

Silicon based bipolar power transistor (BPT) as a switching power transistor has been replaced by other superior power devices in the past two decades. This transformation is primarily due to the poor performance of the BPT. Among many problems of the BPT, low current gain and small safe operation area (SOA) caused by the second breakdown have been most detrimental to silicon BPT's fate. However, BPT performance based on newer materials, such as wide bandgap semiconductors, has not been previously studied. This paper systematically compares the BPTs based on wide bandgap semiconductor materials. Device figures-of-merit for conduction and switching losses are proposed. Comparison of the BPT based on total power loss is then provided. Based on this work, it is concluded that BPTs based on wide bandgap materials overcome the critical disadvantages of silicon BPTs, and are capable of switching power operation at several hundred kilohertz frequencies at very high current densities and voltages. Therefore, BPTs based on wide bandgap materials are still very attractive switching power devices for the future.

Alex Q. Huang | Bo Zhang | Bo Zhang | A. Huang

[1] Steven T. Peake,et al. Power semiconductor devices , 1995 .

[2] M. Melloch,et al. High-voltage double-implanted power MOSFET's in 6H-SiC , 1997, IEEE Electron Device Letters.

[3] Michael R. Melloch,et al. Recent Advances in SiC Power Devices , 1997 .

[4] Alex Q. Huang,et al. Comparing SiC switching power devices: MOSFET, NPN transistor and GTO thyristor , 2000 .

[5] A. Agarwal,et al. 4H-SiC Power Devices: Comparative Overview of UMOS, DMOS, and GTO Device Structures , 1997 .

[6] Milan M. Jovanovic,et al. Characterization of RBSOA of high power bipolar transistors using a nondestructive tester , 1985, 1985 IEEE Power Electronics Specialists Conference.

[7] M. Ghezzo,et al. Wide Bandgap Semiconductor Power Devices , 1997 .

[8] D.y. Chen,et al. Reverse-Bias Second Breakdown of High-Power Darlington Transistors , 1983, IEEE Transactions on Aerospace and Electronic Systems.

[9] B. J. Baliga,et al. Power semiconductor device figure of merit for high-frequency applications , 1989, IEEE Electron Device Letters.

[10] Fred Lee,et al. Nondestructive Characterization of RBSOA of High-Power Bipolar Transistors , 1986, IEEE Transactions on Aerospace and Electronic Systems.