E-Band 85-mW Oscillator and 1.3-W Amplifier ICs Using 0.12µm GaN HEMTs for Millimeter-Wave Transceivers

This paper presents two oscillators (OSCs) and a high power amplifier (PA) for millimeter-wave transceivers. The circuits were designed with a grounded coplanar waveguide (GCPW) and 0.12-μm GaN HEMT technology. One OSC, which was based on a simple series source feedback topology, oscillated at a frequency of 74.5 GHz with an output power of 2.2 mW (3.38 dBm). This oscillation frequency was the highest ever reported for GaN HEMT OSCs. Another OSC with a buffer delivered a record power of 85 mW (19.28 dBm) at 70.75 GHz. In addition, a single-chip PA with a 3-stage common source scheme delivered an output power of 1.3 W (31.13 dBm) at 75 GHz with a CW source module. The 3-dB bandwidth of the PA was 13 GHz from 67 to 80 GHz. The performance of these devices is sufficient for use in E-band fixed wireless access systems and automotive radar systems. The results demonstrate that the GaN HEMTs represent a feasible means of addressing the stringent demands imposed by various millimeter-wave applications.

[1]  P. Kangaslahti,et al.  W-Band GaN MMIC with 842 mW output power at 88 GHz , 2010, 2010 IEEE MTT-S International Microwave Symposium.

[2]  Y.C. Chen,et al.  A 427 mW, 20% compact W-band InP HEMT MMIC power amplifier , 1999, 1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001).

[3]  M. Kintis,et al.  A V-Band Monolithic AlGaN/GaN VCO , 2008, IEEE Microwave and Wireless Components Letters.

[4]  Y.C. Chen,et al.  A single chip 1-W InP HEMT V-band module , 1999, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st Annual. Technical Digest 1999 (Cat. No.99CH36369).

[5]  Naoki Hara,et al.  GaN MMIC amplifiers for W-band transceivers , 2009, 2009 European Microwave Integrated Circuits Conference (EuMIC).

[6]  A. Kurdoghlian,et al.  GaN MMIC PAs for E-Band (71 GHz - 95 GHz) Radio , 2008, 2008 IEEE Compound Semiconductor Integrated Circuits Symposium.

[7]  S. Yokokawa,et al.  A 36 W CW AlGaN/GaN-power HEMT using surface-charge-controlled structure , 2002, 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278).

[8]  Naoki Hara,et al.  High‐power GaN‐HEMT with high three‐terminal breakdown voltage for W‐band applications , 2009 .

[9]  Ieee Microwave Theory,et al.  IEEE microwave and wireless components letters : a publication of the IEEE Microwave Theory and Techniques Society , 2001 .

[10]  M. Kintis,et al.  A Q-band low phase noise monolithic AlGaN/GaN HEMT VCO , 2006, IEEE Microwave and Wireless Components Letters.

[11]  Y. Inoue,et al.  SiC Backside Via-hole Process For GaN HEMT MMICs Using High Etch Rate ICP Etching , 2009 .

[12]  K. Makiyama,et al.  High Fmax GaN-HEMT with High Breakdown Voltage for Millimeter-Wave Applications , 2007, 2007 IEEE Compound Semiconductor Integrated Circuits Symposium.

[13]  Naoki Hara,et al.  High‐fmax GaN HEMT with high breakdown voltage over 100 V for millimeter‐wave applications , 2007 .

[14]  Hara Naoki,et al.  High-Power GaN-HEMT with High Three-Terminal Breakdown Voltage for W-band Applications , 2009 .