Auger recombination in strained SixGe1−x/Si superlattices

Abstract A full scale microscopic calculation of Auger rates is performed on Si x Ge 1− x /Si superlattice structures with widely different parameters. We show that Auger rates are reasonably independent of superlattice parameters with Auger rates of some two orders of magnitude larger than that of bulk silicon. Bandstructure is found to be the dominant factor in the calculation and a simple geometrical model is devised to investigate different types of structure.

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