论文信息 - 3D Thermal Analysis for SOI and its impact on Circuit Performance

3D Thermal Analysis for SOI and its impact on Circuit Performance

3D-thermal analysis for multifinger devices is developed for partially depleted SOI and Cu interconnects. Using this technique the temperature rise for multifinger devices is at least a factor of 3 higher than predicted by I-D thermal resistance models.

R. V. Joshi | Is. S. Kang | C. T. Chuang

[1] Kenneth E. Goodson,et al. Measurement and modeling of self-heating in SOI nMOSFET's , 1994 .

[2] M. M. Pelella,et al. Physical modeling of temperature dependences of SOI CMOS devices and circuits including self-heating , 1998 .