论文信息 - MSI High Speed Low Power GaAs ICs Using Schottky Diode FET Logic

MSI High Speed Low Power GaAs ICs Using Schottky Diode FET Logic

A new approach to the design and fabrication of planar high speed GaAs integrated circuits is described. Experimental digital circuits of MSI level complexities have been fabricated showing high gate density, low dynamic switching energies and very high switching speeds.

R.C. Eden | B.M. Welch | R. Zucca | S.I. Long | F.S. Lee

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