Spatial Distributions of Trapping Centers in $ \hbox{HfO}_{2}/\hbox{SiO}_{2}$ Gate Stack

An analysis methodology for charge pumping (CP) measurements was developed and applied to extract spatial distributions of traps in SiO 2/HfO2 gate stacks. This analysis indicates that the traps accessible by CP measurements in the frequency range down to a few kilohertz are located primarily within the SiO2 layer and HfO2/SiO2 interface region. The trap density in the SiO2 layer increases closer to the high-kappa dielectric, while the trap spatial profile as a function of the distance from the high-kappa film was found to be dependent on high-kappa film characteristics. These results point to interactions with the high-kappa dielectric as a cause of trap generation in the interfacial SiO2 layer

[1]  C. Young,et al.  Improved interface quality and charge-trapping characteristics of MOSFETs with high-/spl kappa/ gate dielectric , 2005, IEEE Electron Device Letters.

[2]  T. Ma,et al.  Charge trapping in ultrathin hafnium oxide , 2002, IEEE Electron Device Letters.

[3]  Theodore I. Kamins,et al.  Device Electronics for Integrated Circuits , 1977 .

[4]  G. Bersuker,et al.  Hot carrier degradation of HfSiON gate dielectrics with TiN electrode , 2005, IEEE Transactions on Device and Materials Reliability.

[5]  L. Colombo,et al.  Carrier mobility in MOSFETs fabricated with Hf-Si-O-N gate dielectric, polysilicon gate electrode, and self-aligned source and drain , 2002, IEEE Electron Device Letters.

[6]  Theodore L. Tewksbury,et al.  Relaxation effects in MOS devices due to tunnel exchange with near-interface oxide traps , 1992 .

[7]  G. Groeseneken,et al.  Analysis of the charge pumping technique and its application for the evaluation of MOSFET degradation , 1989 .

[8]  Gerard Ghibaudo,et al.  Analytical study of the contribution of fast and slow oxide traps to the charge pumping current in MOS structures , 1996 .

[9]  J. Robertson,et al.  Bonding and interface states of Si:HfO2 and Si:ZrO2 interfaces , 2006 .

[10]  B. H. Lee,et al.  Interfacial Layer-Induced Mobility Degradation in High-k Transistors , 2004 .

[11]  Yuan Taur,et al.  CMOS devices below 0.1 /spl mu/m: how high will performance go? , 1997, International Electron Devices Meeting. IEDM Technical Digest.

[12]  J. Suehle,et al.  Asymmetric energy distribution of interface traps in n- and p-MOSFETs with HfO/sub 2/ gate dielectricon ultrathin SiON buffer layer , 2004, IEEE Electron Device Letters.

[13]  Y. Maneglia,et al.  In-depth exploration of Si-SiO/sub 2/ interface traps in MOS transistors using the charge pumping technique , 1997 .

[14]  Byoung Hun Lee,et al.  Interfacial layer dependence of HFSIXOy gate stacks on vT instability and charge trapping using ULTRA-short pulse I-V characterization , 2005 .

[15]  Gennadi Bersuker,et al.  Scanning transmission electron microscopy investigations of interfacial layers in HfO2 gate stacks , 2006 .

[16]  Youngmin Kim,et al.  Trench isolation step-induced (TRISI) narrow width effect on MOSFET , 2002, IEEE Electron Device Letters.

[17]  John F. Conley,et al.  Electrical properties and reliability of HfO/sub 2/ deposited via ALD using Hf(NO/sub 3/)/sub 4/ precursor , 2002, IEEE International Integrated Reliability Workshop Final Report, 2002..

[18]  Y. Taur,et al.  Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's , 1997, IEEE Electron Device Letters.

[19]  Byoung Hun Lee,et al.  Properties of the interfacial layer in the high-k gate stack and transistor performance , 2005 .

[20]  A. Elliot,et al.  The use of charge pumping currents to measure surface state densities in MOS transistors , 1976 .

[21]  J. Suehle.  Ultrathin gate oxide reliability: physical models, statistics, and characterization , 2002 .

[22]  B. Lee,et al.  Effects of boron diffusion in pMOSFETs with TiN-HfSiO gate stack , 2005 .

[23]  F. Heiman,et al.  The effects of oxide traps on the MOS capacitance , 1965 .

[24]  Ernest Y. Wu,et al.  Determination of ultra-thin oxide voltages and thickness and the impact on reliability projection , 1997, 1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual.

[25]  Mario G. Ancona,et al.  Numerical simulation of 3‐level charge pumping , 1992 .

[26]  R. Kassing,et al.  Time‐dependent response of interface states in indium phosphide metal–insulator–semiconductor capacitors investigated with constant‐capacitance deep‐level transient spectroscopy , 1983 .

[27]  J. Stathis,et al.  Reliability projection for ultra-thin oxides at low voltage , 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).

[28]  G. Groeseneken,et al.  A reliable approach to charge-pumping measurements in MOS transistors , 1984, IEEE Transactions on Electron Devices.

[29]  Patrick M. Lenahan,et al.  The effect of interfacial layer properties on the performance of Hf-based gate stack devices , 2006 .

[31]  Eric M. Vogel,et al.  Impact of substrate hot hole injection on ultrathin silicon dioxide breakdown , 2003 .

[32]  Philippe Roussel,et al.  Stress polarity dependence of degradation and breakdown of SiO/sub 2//high-k stacks , 2003, 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual..

[33]  Howard R. Huff,et al.  Experimental study of etched back thermal oxide for optimization of the Si/high-k interface , 2004 .

[34]  E. Vogel,et al.  Interaction between low-energy electrons and defects created by hot holes in ultrathin silicon dioxide , 2002 .

[35]  W. Read,et al.  Statistics of the Recombinations of Holes and Electrons , 1952 .

[36]  A. Agarwal,et al.  Low leakage, ultra-thin gate oxides for extremely high performance sub-100 nm nMOSFETs , 1997, International Electron Devices Meeting. IEDM Technical Digest.

[37]  J.S. Suehle,et al.  Impact of the trapping of anode hot holes on silicon dioxide breakdown , 2002, IEEE Electron Device Letters.

[38]  Y. Maneglia,et al.  Extraction of slow oxide trap concentration profiles in metal–oxide–semiconductor transistors using the charge pumping method , 1996 .

[39]  Y. King,et al.  Reliable extraction of interface states from charge pumping method in ultra-thin gate oxide MOSFETs , 2003, International Conference on Microelectronic Test Structures, 2003..

[40]  R. Hall.  Electron-Hole Recombination in Germanium , 1952 .

[41]  M. Ancona,et al.  Determination of interface trap capture cross sections using three-level charge pumping , 1990, IEEE Electron Device Letters.

[42]  Se Jong Rhee,et al.  Charge trapping and detrapping characteristics in hafnium silicate gate stack under static and dynamic stress , 2005, IEEE Electron Device Letters.

[43]  J.C. Lee,et al.  Area dependence of TDDB characteristics for HfO2 gate dielectrics , 2002, IEEE Electron Device Letters.