Design of a Silicon Carbide Chemical Vapor Deposition Reactor Cleaning Process Using Chlorine Trifluoride Gas Accounting for Exothermic Reaction Heat
暂无分享,去创建一个
Hitoshi Habuka | S. Ishii | I. Mizushima | Hideki Ito | Yoshinao Takahashi | Y. Daigo | A. Ishiguro | Masaya Hayashi | Takumi Mamyouda
[1] Hitoshi Habuka,et al. High-Temperature Reactor Cleaning Using Chlorine Trifluoride Gas for Silicon Carbide Chemical Vapor Deposition , 2019, ECS Journal of Solid State Science and Technology.
[2] Hitoshi Habuka,et al. Quick Cleaning Process for Silicon Carbide Chemical Vapor Deposition Reactor , 2017 .
[3] Hitoshi Habuka,et al. Susceptor Coating Materials Applicable for SiC Reactor Cleaning , 2016, 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM).
[4] Hitoshi Habuka,et al. Metal Fluorides Produced Using Chlorine Trifluoride Gas , 2015 .
[5] Y. Fukai,et al. Determination of Etch Rate Behavior of 4H–SiC Using Chlorine Trifluoride Gas , 2007 .
[6] Y. Fukai,et al. Silicon Carbide Etching Using Chlorine Trifluoride Gas , 2005 .
[7] H. Okumura,et al. In situ Observation of Clusters in Gas Phase during 4H-SiC Epitaxial Growth by Chemical Vapor Deposition Method , 2004 .
[8] Hitoshi Habuka,et al. Exposure of Tantalum Carbide, Silicon Nitride and Aluminum Nitride to Chlorine Trifluoride Gas , 2019, ECS Journal of Solid State Science and Technology.
[9] Hitoshi Habuka,et al. Repetition of In Situ Cleaning Using Chlorine Trifluoride Gas for Silicon Carbide Epitaxial Reactor , 2016 .
[10] Hitoshi Habuka,et al. In Situ Cleaning Process of Silicon Carbide Epitaxial Reactor , 2015 .
[11] Hitoshi Habuka,et al. Cleaning process applicable to silicon carbide chemical vapor deposition reactor , 2014 .
[12] S. Ito,et al. 4H-SiC Homoepitaxial Growth on Substrate with Vicinal Off-Angle Lower than 1° , 2013 .