Experimental evidence for the role of electrodes and oxygen vacancies in voltage nonlinearities observed in high-k metal-insulator-metal capacitors

This work reports on voltage nonlinearities in metal-insulator-metal (MIM) capacitors using amorphous barium titanate (a-BaTiO3) thin films. It is experimentally demonstrated that voltage nonlinearity is related to the formation of a double layer at electrodes (electrode polarization mechanism). The magnitude of nonlinearities is shown to be controlled by the nature of the metal contacts (Al, Cu, Au, and Ag), as well as by the presence of oxygen during film deposition. It is thought that oxygen vacancies are the defects responsible for the nonlinear character of high-k oxide-based MIM capacitors.

[1]  Alfredo Pasquarello,et al.  Oxygen vacancy in monoclinic HfO2: A consistent interpretation of trap assisted conduction, direct electron injection, and optical absorption experiments , 2006 .

[2]  B. H. Lee,et al.  Negative oxygen vacancies in HfO2 as charge traps in high-k stacks , 2006, cond-mat/0605593.

[3]  Krishna C. Saraswat,et al.  Atomic layer deposition of ZrO2 on W for metal-insulator-metal capacitor application , 2003 .

[4]  H. Hwang,et al.  Thermal Leakage Improvement by Using a High-Work-Function Ni Electrode in High- κ TiHfO Metal–Insulator–Metal Capacitors , 2007 .

[5]  P. Gonon,et al.  Modeling of nonlinearities in the capacitance-voltage characteristics of high-k metal-insulator-metal capacitors , 2007 .

[6]  Ian W. Boyd,et al.  Electrical property improvements of yttrium oxide-based metal-insulator-metal capacitors , 2006 .

[7]  S. Blonkowski,et al.  Investigation and modeling of the electrical properties of metal–oxide–metal structures formed from chemical vapor deposited Ta2O5 films , 2001 .

[8]  G. Eisenstein,et al.  High capacitance density metal-insulator-metal structure based on Al2O3-HfTiO nanolaminate stacks , 2007 .

[9]  L. Goux,et al.  Metallorganic Chemical Vapor Deposition of Sr-Ta-O and Bi-Ta-O Films for Backend Integration of High-k Capacitors , 2006 .

[10]  S. Crémer,et al.  Microscopic model for dielectric constant in metal-insulator-metal capacitors with high-permittivity metallic oxides , 2006 .

[11]  Byung Jin Cho,et al.  Physical and electrical characterization of HfO2 metal-insulator-metal capacitors for si analog circuit applications , 2003 .

[12]  R. Waser,et al.  Oxygen vacancy migration and time-dependent leakage current behavior of Ba0.3Sr0.7TiO3 thin films , 2005 .

[13]  J. Babcock,et al.  Analog characteristics of metal-insulator-metal capacitors using PECVD nitride dielectrics , 2001, IEEE Electron Device Letters.

[14]  W. Lau Similarity between the first ionized state of the oxygen vacancy double donor in tantalum oxide and the first ionized state of the cadmium vacancy double acceptor in cadmium sulfide , 2007 .

[15]  J. Robertson,et al.  Defect states in the high-dielectric-constant gate oxide LaAlO3 , 2006 .

[16]  P. Gonon,et al.  Dielectric response of Cu/amorphous BaTiO3/Cu capacitors , 2007 .

[17]  P. Gonon,et al.  Space charge limited transient currents and oxygen vacancy mobility in amorphous BaTiO3 thin films , 2006 .