Time-dependent-dielectric-breakdown of hydrogen implanted polyoxides

Abstract The time-to-breakdown ( t bd ) of polysilicon/polyoxide/polysilicon structures, hydrogenated by hydrogen ion implantation, is investigated. The ln( t bd ) versus 1/ E ox projection lines are corrected by using an average oxide field enhancement factor for the interface polysilicon/thermally grown polyoxide. A field acceleration factor G ≈270 MV/cm in the time-to-breakdown projection line is obtained. The obtained lower values of the field acceleration factor G , in comparison to as-grown polyoxides, are explained in the terms of the oxide traps generated during the hydrogen ion implantation.