Time-dependent-dielectric-breakdown of hydrogen implanted polyoxides
暂无分享,去创建一个
Charalabos A. Dimitriadis | V. K. Gueorguiev | L. I. Popova | C. Dimitriadis | S. Andreev | V. Gueorguiev | T. Ivanov | Tz. E. Ivanov | S. K. Andreev | L. Popova
[1] Chih-Tang Sah,et al. Models and experiments on degradation of oxidized silicon , 1987 .
[2] Ih-Chin Chen,et al. TDDB on poly-gate single doping type capacitors , 1992, 30th Annual Proceedings Reliability Physics 1992.
[3] G. Groeseneken,et al. A quantitative model for the conduction in oxides thermally grown from polycrystalline silicon , 1986, IEEE Transactions on Electron Devices.
[4] Jack C. Lee,et al. Modeling and characterization of gate oxide reliability , 1988 .
[5] Alan Mathewson,et al. Evaluation of the lifetime and failure probability for inter-poly oxides from RVS measurements , 1994 .
[6] H. Miyoshi,et al. Origin of positive charge generated in thin SiO/sub 2/ films during high-field electrical stress , 1999 .
[7] C. Dimitriadis,et al. Oxide field enhancement corrected time dependent dielectric breakdown of polyoxides , 2000 .
[8] C. Hu,et al. Projecting gate oxide reliability and optimizing reliability screens , 1990 .
[9] R.-P. Vollertsen,et al. Statistical modelling of time dependent oxide breakdown distributions , 1993 .
[10] C. Dimitriadis,et al. Electron trapping probabilities in hydrogen ion implanted silicon dioxide films thermally grown on polycrystalline silicon , 2000 .