Deactivation of group III acceptors in silicon during keV electron irradiation

Experimental results on p‐Si metal‐oxide‐semiconductor capacitors (MOSC’s) are presented which demonstrate the electrical deactivation of the acceptor dopant impurity during 8‐keV electron irradiation not only in boron but also aluminum and indium‐doped silicon. The deactivation rates of the acceptors during the 8‐keV electron irradiation are nearly independent of the acceptor impurity type. The final density of the remaining active acceptor approaches nonzero values N∞, with N∞(B) Al–H>In‐H. These deactivation results are consistent with our hydrogen bond model. The thermal annealing or regeneration rate of the deactivated acceptors in the MOSC’s irradiated by 8‐keV electron is much smaller than that in the MOSC’s that have undergone avalanche electron injection, indicating that the keV electron irradiation gives rise to stronger hydrogen‐acceptor bond.