Device modeling for MOS devices at low temperatures

An attempt was made to develop a two-dimensional model for solving Poisson's equation over a temperature range of 50-350 K for MOS devices. This required the incorporation of temperature dependencies in Poisson's equation relevant to MOS transistors. To solve the system of nonlinear differential Poisson's equations, the program developed uses linearization techniques in conjunction with Newton's method and the successive over relaxation method. The linearizing techniques replace nonlinear equations with linear approximations derived from the truncation of the expansion of the nonlinear terms. The results of the numerical analysis consist of the printout of electrostatic potential and the carrier densities for electrons and holes as a function of each data point's position within the device.<<ETX>>