论文信息 - High speed resonant cavity enhanced Ge photodetectors on Si reflecting substrates for 1550 nm operation - 字舞流文

High speed resonant cavity enhanced Ge photodetectors on Si reflecting substrates for 1550 nm operation

We have fabricated high-speed resonant-cavity-enhanced Ge-on-SOI photodetectors, operating at 1550 nm and demonstrating a 3 dB bandwidth of 12.8 GHz. When optimized, these high-speed detectors should exhibit a quantum efficiency of 75% at 1550 nm.

M.K. Emsley | O.I. Dosunmu | D.D. Cannon | L.C. Kimerling | M.S. Unlu

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