High-power edge-emitting laser diode with narrow vertical beam divergence

10.5 W pulsed optical power with ultra-narrow vertical beam divergence (full width at full maximum ∼1.1°) is achieved at 20 A pulsed current in a 1060 nm laser diode with as-cleaved facets (100 µm-wide and 3500 µm-long cavity). The lasing occurs through the tilted wave mode excited in the GaAs substrate. Temperature-stable operation at low threshold current densities is demonstrated.