Noise degradation induced by /spl gamma/-rays on P- and N-channel junction field-effect transistors

This paper compares the effects of /spl gamma/-rays on the noise behaviour of P- and N-channel JFETs intended as front-end elements in radiation detector preamplifiers. It will be shown that exposure to /spl gamma/-rays affects the noise spectral density in a way which is substantially different for the two types of devices. As a result of the noise analysis it is suggested that in preamplifiers exposed to /spl gamma/-rays the P-channel JFET should be preferred at processing times in the 1-to-10 /spl mu/s range, while the N-channel device remains superior in applications involving processing times below 0.1 /spl mu/s.

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