Pyroelectric properties of thin ferroelectric films and their applications for integrated circuits

Abstract Methods and results of experimental investigations of pyroelrctric effects in thin ferroelectric films are discussed. The PZT films were prepared by the sol-gel techniques on oxidized silicon substrates with platinum electrodes at various temperature regimes. Pyroelectric coefficients of thin films were measured with the use of quasi-static and low-frequency sine-shaped thermal wave methods. It is shown that pyroelectric coefficient depends upon the initial polarization. The value of the coefficient varies from +2·10 −8 to −2·10 −8 C/Kcm 2 as the polarization voltage is changed from −8 to +8 V. The pyroelectric hysteresis phenomena may be used for the creation of new types of integrated devices. The circuit for multiplication of two signals with the use of a pyroelectric active element and also the pyroelectric memory IC are discussed.