High-Speed Visible-Blind Resonant Cavity Enhanced AlGaN Schottky Photodiodes

We have designed, fabricated and tested resonant cavity enhanced visible-blind AlGaN-based Schottky photodiodes. The bottom mirror of the resonant cavity was formed with a 20 pair AlN/ Al0.2Ga0.8N Bragg mirror. The devices were fabricated using a microwave compatible fabrication process. Au and indium-tin-oxide (ITO) thin films were used for Schottky contact formation. ITO and Au-Schottky devices exhibited resonant peaks with 0.153 A/W and 0.046 A/W responsivity values at 337 nm and 350 nm respectively. Temporal high-speed measurements at 357 nm resulted in fast pulse responses with pulse widths as short as 77 ps. The fastest UV detector had a 3-dB bandwidth of 780 MHz.

[1]  High-speed >90% quantum-efficiency p–i–n photodiodes with a resonance wavelength adjustable in the 795–835 nm range , 1999 .

[2]  Ekmel Ozbay,et al.  Solar-blind AlGaN-based Schottky photodiodes with low noise and high detectivity , 2002 .

[3]  A.S. Brown,et al.  The heterogenous integration of GaN thin-film metal-semiconductor-metal photodetectors onto silicon , 2002, IEEE Photonics Technology Letters.

[4]  Joe C. Campbell,et al.  High-performance back-illuminated solar-blind AlGaN metal-semiconductor-metal photodetectors , 2000 .

[5]  Pierre Gibart,et al.  Analysis and modeling of AlxGa1−xN-based Schottky barrier photodiodes , 2000 .

[6]  K. Kishino,et al.  Resonant-Cavity-Enhanced UV Metal-Semiconductor-Metal (MSM) Photodetectors Based on AlGaN System , 2001 .

[7]  E. Ozbay,et al.  InGaAs-based high-performance p-i-n photodiodes , 2002, IEEE Photonics Technology Letters.

[8]  Ekmel Ozbay,et al.  High-Performance Solar-Blind AlGaN Schottky Photodiodes , 2003 .

[9]  E. Ozbay,et al.  High-speed visible-blind GaN-based indium–tin–oxide Schottky photodiodes , 2001 .

[10]  Joe C. Campbell,et al.  Improved detection of the invisible , 1999 .

[11]  45-GHz bandwidth-efficiency resonant-cavity-enhanced ITO-Schottky photodiodes , 2001, IEEE Photonics Technology Letters.

[12]  Joe C. Campbell,et al.  GaN avalanche photodiodes , 2000 .

[13]  Andrew G. Glen,et al.  APPL , 2001 .

[14]  J. Muszalski,et al.  Resonant cavity enhanced photonic devices , 1995 .

[15]  S.J. Chang,et al.  GaN metal-semiconductor-metal ultraviolet photodetectors with transparent indium-tin-oxide Schottky contacts , 2001, IEEE Photonics Technology Letters.

[16]  M. Shur,et al.  Low-frequency noise in Al0.4Ga0.6N-based Schottky barrier photodetectors , 2001 .

[17]  Manijeh Razeghi,et al.  Semiconductor ultraviolet detectors , 1996 .

[18]  Umesh K. Mishra,et al.  Solar-blind AlGaN-based inverted heterostructure photodiodes , 2000 .

[19]  C. Caneau,et al.  A high-speed ITO-InAlAs-InGaAs Schottky-barrier photodetector , 1997, IEEE Photonics Technology Letters.

[20]  Joe C. Campbell,et al.  Improved solar-blind detectivity using an AlxGa1−xN heterojunction p–i–n photodiode , 2002 .