论文信息 - InSb quantum dot LEDs grown by molecular beam epitaxy for mid-infrared applications

InSb quantum dot LEDs grown by molecular beam epitaxy for mid-infrared applications

We report the molecular beam epitaxial growth of InSb quantum dots (QD) inserted as sub-monolayers in an InAs matrix which exhibit intense mid-infrared photoluminescence up to room temperature. The InSb QD sheets were formed by briefly exposing the surface to an antimony flux (Sb2) exploiting an As-Sb anion exchange reaction. Light emitting diodes were fabricated using 10 InSb QD sheets and were found to exhibit bright electroluminescence with a single peak at 3.8μm at room temperature.

V. A. Solov'ev | S. V. Ivanov | P. J. Carrington | Q. Zhuang | A. Krier

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