论文信息 - Mechanism of {111} Facet Formation during Lateral Solid Phase Epitaxy of Silicon on Amorphous Insulator Substrates - 字舞流文

Mechanism of {111} Facet Formation during Lateral Solid Phase Epitaxy of Silicon on Amorphous Insulator Substrates

I. Ohdomari | K. Kawai | Kazumasa Suzuki | K. Iemura | T. Ueno | T. Morisawa

[1] H. Ishiwara,et al. Characterization of Solid-Phase Epitaxially-Grown Silicon Films on SiO2 , 1984 .

[2] M. Tabe,et al. Amorphous‐Si/crystalline‐Si facet formation during Si solid‐phase epitaxy near Si/SiO2 boundary , 1984 .

[3] H. Ishiwara,et al. Lateral solid phase epitaxy of amorphous Si films on Si substrates with SiO2 patterns , 1983 .

[4] M. Tabe,et al. Solid-Phase Epitaxy of CVD Amorphous Si Film on Crystalline Si , 1982 .

[5] J. Washburn,et al. Some observations on the amorphous to crystalline transformation in silicon , 1982 .

[6] S. Lau,et al. Solid‐state epitaxial growth of deposited Si films , 1979 .

[7] T. Sigmon,et al. Substrate‐orientation dependence of the epitaxial regrowth rate from Si‐implanted amorphous Si , 1978 .