论文信息 - A SiGe WCDMA/DCS dual-band RF front-end receiver

A SiGe WCDMA/DCS dual-band RF front-end receiver

A WCDMA/DCS dual-band RF front-end receiver IC fabricated in a 0.35 /spl mu/m SiGe BiCMOS technology is presented. This RF receiver uses a novel fully-differential LNA with dual input-stages to replace the requirement of paralleling two similar LNAs in previous dual-band designs. This chip dissipates 24 mA from a 2.7 V supply and can be used in direct-conversion or low-IF receivers. The measured voltage gain, P1dB and iIP3 are 32 dB, -25 dBm and -15 dBm, respectively.

Ming-Ching Kuo | Yung-Hui Chen | Shin-Fu Chen | Peng-Un Su | June-Ming Hsu

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